Researchers have designed and evaluated a dual material gate (DMG) junctionless FinFET (JLFET) at the 7-nanometer (nm) technology node. This study focuses on analyzing the analog, radiofrequency (RF), and linearity parameters of this device, which are crucial for its application in next-generation integrated circuits. The FinFET architecture is fundamental for overcoming the scaling limitations of traditional planar transistors, while the junctionless configuration simplifies the manufacturing process and improves performance by reducing dopant scattering and device variability.

The dual material gate design allows for optimized electrostatic control over the transistor channel. By using two metals with different work functions for the gate, more effective modulation of the surface potential and a reduction of the short-channel effect are achieved. This translates into an improvement of key parameters such as transconductance (gm), output resistance (Rout), intrinsic gain factor (gm*Rout), transition frequency (fT), and maximum oscillation frequency (fmax). The evaluation was performed at different temperatures, which is essential for understanding the device's behavior under various operating conditions and ensuring its reliability in high-density and high-performance applications.